场效应晶体管(FET)可以通过电场可逆调控材料的载流子浓度,是一种控制二维材料系统电学性质的有效方法.最近,作者实验室发明了一种新的场效应晶体管器件,它利用固体离子导体(SIC)作为栅介质,通过电场驱动锂离子进出样品来调控样品的载流子浓度,从而控制样品的物理性质和相变.在本论文中,作者利用这种新型的固体离子导体基场效应管器件(SIC-FET)成功地调控了ZrNCl薄层的电学性质.通过施加电场,将固体锂离子导体中的锂离子插入ZrNCl薄层样品中,实现了样品从绝缘体到超导体的转变,最佳超导电性的中点临界温度约为15.1K.实验结果表明,固体离子导体基场效应管器件具有在层状材料中引入载流子的优异性能,该器件将是寻找新的超导体和其他新奇电子相的有效途径.“,”Gating by field-effect transistors(FETs)is an effective way to control electronic properties in two-dimensional systems by reversibly tuning charge carrier density.Recently,our group has developed a new field-effect transistor(FET)device by using a solid ion conductor(SIC)as the gate dielectric,which can tune the carrier density of samples by driving Li+in and out of the samples and consequently control the physical properties and phase transitions.Here,by using such SIC-FET device,we have successfully modulated the electronic properties of ZrNCl thin flakes.By driving Li+into the ZrNCl thin flakes via the SIC-FET,an insulator-to-superconductor transition is realized and the midpoint critical temperature(Tcmid)for the optimal superconductivity is about 15.1K. The present results demonstrate the excellent capability of the SIC-FET device to introduce the charge carriers in layered materials.The SIC-FET would be an effective way to search for new superconductors and other novel electronic phases.