论文部分内容阅读
,Semipolar (11(2)2) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic
【机 构】
：
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian Univers
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2017年2期
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