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本文介绍光电导谱分析方法及用该方法研究曝光及退火处理对非晶硅中次带吸收的影响,给出非晶硅(氢)薄膜的次带吸收数据,结果可与其它方法比较。样品为高频及直流辉光放电本征非晶硅。膜厚0.6～1μm。衬底分别为7059和95号玻璃。对每块样品作透射谱及光电导谱测试。用PE330光谱仪测透射谱,用PE211棱镜单色仪测光电导谱,单色仪的光强及波长经过仔细的校准。电导率测试采用共面电极,电极材
This paper introduces the method of photoconductive spectroscopy and the influence of exposure and annealing treatment on the absorption of the secondary band in amorphous silicon by this method. The data of absorption band of amorphous silicon (hydrogen) film are given and the results can be compared with other methods. The samples were high-frequency and DC glow discharge intrinsic amorphous silicon. Thickness of 0.6 ~ 1μm. Substrates are No. 7059 and No. 95 glass. Each sample was subjected to transmission and photoconductive spectroscopy tests. The transmission spectrum was measured with a PE330 spectrometer, and the photoconductive spectrum was measured with a PE211 prism monochromator. The intensity and wavelength of the monochromator were carefully calibrated. Conductivity test using coplanar electrode, electrode material