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自1952年提出A~NB~((?)-N)的化合物具有半导性以来,极大地促进了对半导体材料的制备和研究。随着半导体器件向超小型、高速、高频大功率、耐高温、耐辐射的方向发展,提出了寻求能满足上述要求的新型半导体材料的问题。
Since 1952 A ~ NB ~ ((?) - N) compounds have been semiconducting, greatly promoted the preparation of semiconductor materials and research. With the development of semiconductor devices in the direction of ultra-compact, high-speed, high-frequency high-power, high temperature and radiation resistance, the problem of finding novel semiconductor materials that meet the above requirements has been proposed.