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半导体表面二氧化硅层中的可动离子对半导体器件,特别是MOS器件的可靠性和稳定性有着极其重要的影响。长期来,人们为了提高半导体器件的可靠性和稳定性,对二氧化硅层中的可动离子进行了广泛的研究。目前研究氧化层中可动离子沾污的最常用方法是加偏压和温度的电容电压法(以下简称BJ-CV法)。但是该方法存在着好多缺点:
Movable ions in the silicon dioxide layer on the surface of the semiconductor have an extremely important influence on the reliability and the stability of semiconductor devices, in particular MOS devices. For a long time, people in order to improve the reliability and stability of semiconductor devices, a wide range of mobile ions in the silica layer. At present, the most common method to study the molality of the movable layer in the oxide layer is the voltage-to-voltage method with bias and temperature (hereinafter referred to as BJ-CV method). However, this method has many disadvantages: