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基于氧化层陷阱电荷以及界面陷阱电荷的产生动力学以及辐射应力损伤的微观机理,推导出了金属-氧化物-半导体场效应管(MOSFET)中辐射应力引起的氧化层陷阱电荷、界面陷阱电荷导致的阈值电压漂移量与辐射剂量之间定量关系的模型.根据模型可以得到:低剂量情况下,氧化层陷阱电荷与界面陷阱电荷导致的阈值电压漂移量与辐射剂量成正比;高剂量情况下,氧化层陷阱电荷导致的阈值电压漂移量发生饱和,其峰值与辐射剂量无关,界面陷阱电荷导致的阈值电压漂移量与辐射剂量呈指数关系.另外,模型还表明氧化层陷阱电荷与界面陷阱电荷在不同的辐射剂量点开始产生饱和现象,其中界面陷阱电荷先于氧化层陷阱电荷产生饱和现象.最后,用实验验证了该模型的正确性.该模型可以较为准确地预测辐射应力作用下MOSFET的退化情况.
Based on the oxide traps and the generation dynamics of interface traps and the microscopic mechanism of radiation stress damage, the oxide trap charge caused by radiation stress in metal-oxide-semiconductor field-effect transistor (MOSFET) The threshold voltage drift caused by the oxide charge and interface trap charge is directly proportional to the dose of radiation dose.At the high dose condition, The threshold voltage drift due to the oxide charge of the oxide layer is saturated and the peak value is independent of the radiation dose.The threshold voltage drift caused by the interface trap charge is exponential with the radiation dose.The model also shows that the charge of the oxide layer and the interface trap charge are in the At different radiation dose points, the saturation phenomenon begins to occur, in which the interface trap charge is saturated before the oxide trap charge.Finally, the correctness of the model is verified by experiments.The model can predict the degradation of MOSFET under radiation stress more accurately Happening.