利用 Kr F准分子激光器及聚酰亚胺靶在硅衬底上沉积出了类石墨薄膜。借助于 X射线光电子谱及 Raman光谱手段对薄膜微结构进行了分析。并用该薄膜作阴极 ,研究了其场发射特性。实验结果显示出该薄膜具有较好的场电子发射性能 ,发射点密度高达 1× 1 0 5 / cm2 以上。有可能作为一种新型的冷阴极电子源 Graphite-like films were deposited on silicon substrates using Kr F excimer lasers and polyimide targets. The microstructure of the films was analyzed by means of X-ray photoelectron spectroscopy and Raman spectroscopy. The film was used as a cathode to study its field emission characteristics. The experimental results show that the film has good field electron emission properties, emitting point density as high as 1 × 105 / cm2 above. It is possible as a new cold cathode electron source