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由于尺寸缩小引起的量子效应,硒(Se)材料的低维纳米结构具有更高的光响应和低的阈值激射等特性,因此成为纳米电子与纳米光电子器件领域一个重要的研究方向.本文通过对非晶硒薄膜的快速热退火来制备硒纳米颗粒,退火温度在100—180 C之间时,结晶后的硒纳米颗粒均为三角晶体结构,其颗粒尺寸随退火温度的增加而线性增大.光致发光谱测试发现三个发光峰,分别位于1.4 eV,1.7 eV和1.83 eV.研究发现位于1.4 eV处的发光峰来源于非晶硒缺陷发光,位于1.83 eV处的发光峰来源于晶体硒的带带跃迁发光;而位于1.7 eV处的发光峰强度随激发功率增强而指数增大,且向短波长移动,该发光峰应该来源于非晶硒与硒纳米颗粒界面处的施主-受主对复合发光.
Due to the quantum effect caused by the reduction in size, low-dimensional nanostructures of selenium (Se) have higher photoresponse and lower threshold lasing, which make them an important research direction in the field of nanoelectronics and nanometer optoelectronic devices.Through the The rapid thermal annealing of amorphous selenium film to prepare selenium nanoparticles, the annealing temperature between 100-180 C, the selenium nanoparticles after crystallization are triangular crystal structure, the particle size increases linearly with increasing annealing temperature The results of photoluminescence spectroscopy showed that there were three luminescence peaks at 1.4 eV, 1.7 eV and 1.83 eV respectively.It was found that the luminescence peak at 1.4 eV originated from the amorphous selenium-deficient luminescence and the luminescence peak at 1.83 eV originated from the crystal The band transition of selenium emits light. The intensity of the luminescence peak at 1.7 eV increases exponentially with the increase of excitation power and shifts to short wavelength. The luminescence peak should originate from the donor-acceptor at the interface between amorphous selenium and selenium nanoparticle The main composite light.