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对18毫米近贴聚焦式微通道板增强器的光电阴极或微通道板进行选通,可获得曝光时间约为1毫微秒的光闸。本文介绍光闸性能的测量结果,包括多个增强器在各种不同的脉冲形态下的总光门、均匀性与时间的关系、分辨率、线性度和动态范围。讨论了与快速选通有关的增强器的参数以及由增强器的几何形状造成的选通速度的局限性。还给出了作过特殊改进的增强器的结果,其中除光电阴极的3毫米×18毫米区域外,全用不透明的金属底涂层覆盖。同时也给出了第三代(GaAs光电阴极)增强器选通的初步结果。各种光闸性能评价用的表征方法也在讨论之内,许评论了增强器选通用的快速电脉冲发生器。
Gating the photocathode or microchannel plate of an 18 mm near-in-focus microchannel plate intensifier provides a shutter with an exposure time of about 1 nanosecond. This article describes the results of measuring shutter performance, including the total light gate, uniformity vs. time, resolution, linearity, and dynamic range for multiple intensifiers in a variety of pulse configurations. The parameters of booster associated with gating and limitations of gating speed caused by booster geometry are discussed. The results of the specially enhanced intensifier are also given, all of which are covered with an opaque metal primer except for the 3 mm x 18 mm area of the photocathode. At the same time, the third generation (GaAs photocathode) enhancer gating initial results are given. Various shutter performance evaluation of the characterization method is also under discussion, Xu comment on the enhancer selected general fast electrical pulse generator.