未来器件的战争将会在GaN/SiC或者是GaN/Si之间打响。今年的GaN(氮化镓)器件市场异常活跃,GaN逐渐成为主流,开始渗透一些批量需求的商业市场。GaN已经在大部分高功率军事应用中站稳了脚跟,并且还抓住了有线电视、移动基础设施的部分市场。虽然LDMOS(横向扩散MOS晶体管)目前仍占据基础设施和工业市场的绝大部分份额,但这种情况可能很快就会改变,因为GaN性能与LDMOS基本相当甚至更胜一筹。也许LDMOS现在的唯一优势 The war on future devices will start between GaN / SiC or GaN / Si. This year’s GaN (gallium nitride) device market is unusually active, with GaN becoming mainstream and beginning to penetrate some of the commercial markets for mass demand. GaN has gained a foothold in most high-power military applications and has captured some of the cable and mobile infrastructure markets. Although LDMOS (Lateral-Diffusion MOS Transistor) still accounts for the lion’s share of the infrastructure and industrial markets, this situation may change soon, as GaN performance is comparable to or even better than LDMOS. Perhaps the only advantage of LDMOS right now