振动环境中,GaN基p-i-n器件的噪声会急剧增加,这限制了器件的探测能力。利用力锤和振动台分别模拟冲击振动和随机振动环境,研究了器件噪声在不同振动条件下的变化规律。实验结果表明,在冲击振动中,器件噪声呈现出周期特性,但噪声幅度随着时间减小。器件噪声主要的频率成分为429Hz,此频率下的器件噪声与激励力的大小、振动加速度的幅度成线性关系。随机振动的实验结果也表明,振动环境中测量到的噪声随着随机振动功率谱密度的增大而线性增加。 In a vibrating environment, the noise of GaN-based p-i-n devices dramatically increases, limiting the device’s detection capability. The impact vibration and random vibration environment were simulated respectively by the hammer and the vibration table. The variation of the device noise under different vibration conditions was studied. The experimental results show that the device noise shows a periodic characteristic in shock vibration, but the noise amplitude decreases with time. The main frequency component of the device noise is 429Hz. The device noise under this frequency is linear with the magnitude of the excitation force and the amplitude of the vibration acceleration. The experimental results of random vibration also show that the noise measured in the vibration environment increases linearly with the increase of random vibration power spectral density.