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提出了一个在超短脉冲注入半导体光放大器 (SOA)时 ,在考虑了半导体带间效应以及带内效应 ,包括载流子热效应、谱烧孔效应、双光子吸收效应以及超快非线性折射效应的自发辐射噪声的计算模型。并利用该模型计算了放大自发辐射 (ASE)噪声对太赫兹光非对称解复用器 (TOAD)开关性能的影响。数值结果表明 ,在考虑ASE噪声情况下 ,TOAD的开关窗口的边沿更陡 ,在开关窗口的尾部还会出现明显的小峰。结果还表明 ,在输入为理想孤子脉冲下 ,即使考虑ASE噪声 ,在TOAD处于开的状态时 ,其输出信号的信噪比也大于 2 5dB。
In this paper, we propose a new method for the semiconductor optical amplifier (SOA) with ultrashort pulse injection, taking into account the band-to-band and in-band effects of the semiconductor, including carrier thermal effect, spectral hole burning effect, two-photon absorption effect and ultrafast nonlinear refraction effect The calculation model of spontaneous emission noise. The influence of amplified spontaneous emission (ASE) noise on the switching performance of THAD asymmetric demultiplexer (TOAD) was calculated by using this model. The numerical results show that the TOAD has a steeper edge of the switch window and a significantly smaller peak at the tail of the switch window, considering ASE noise. The results also show that the signal-to-noise ratio of the output signal is greater than 25 dB even when the TOAD is on even though the input is an ideal soliton pulse, even considering the ASE noise.