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报道了射频反应溅射制备的CdIn2O4薄膜（简称CIO膜）的光学、电学性质以及能带结构与退火处理的关系，包括透射率、折射率、消光系数和薄膜载流于浓度的讨论．研究发现退火处理能引起CIO薄膜透射率、光隙能的增加以及折射率、消光系数的减小，并且使膜的短波吸收边“蓝移”．另外还能明显地提高膜的电导率．文中根据退火处理引起氧空位增加、电子陷阱减小等效应以及薄膜的能带结构和晶格拓展的理论分析讨论了实验所得结果．
The optical and electrical properties of CdIn2O4 thin films prepared by RF reactive sputtering (CIO film) and the relationship between the band structure and the annealing process are reported, including the transmittance, refractive index, extinction coefficient and film carrier concentration. It was found that the annealing treatment can cause the CIO thin film transmittance, the increase of the optical gap energy, the decrease of the refractive index and the extinction coefficient, and the “blue shift” of the short wave absorption edge of the film. In addition, the membrane conductivity can be significantly improved. In this paper, the experimental results are discussed based on the theoretical analysis of the effect of annealing on the increase of oxygen vacancies, the reduction of electron traps, and the band structure and lattice expansion of the films.