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研究了等离子显示器中Sc掺杂对MgO介质保护薄膜外逸电子发射性能的影响。测试出无掺杂和Sc掺杂MgO薄膜在不同温度条件下的外逸电子发射电流,并基于理论模型模拟计算外逸电子发射电流对比实验结果。结果表明Sc掺杂加深了MgO禁带中的电子陷阱深度,延长了MgO薄膜的外逸电子发射的衰减时间。Sc掺杂MgO薄膜具备了持续发射外逸电子的能力,能够实现等离子显示器放电单元稳定快速的寻址。
The influence of Sc doping in plasma display on the electron-emissive properties of MgO dielectric films was investigated. The emission electron emission current of undoped and Sc-doped MgO films at different temperatures was tested and the experimental results of the comparison of the emission electron emission current were calculated based on the theoretical model. The results show that Sc doping deepens the electron trap depth of the MgO band gap and prolongs the decay time of the electron emission of the MgO film. The Sc-doped MgO film possesses the ability of continuously emitting electrons to enable stable and rapid discharge of plasma display cells.