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采用直流辉光CF4 O2 等离子体增强反应蒸发方法沉积了氟掺杂氧化铟透明导电薄膜 ,经过真空退火处理薄膜的电阻率达到 1 8× 10 - 3 Ω·cm ,透光率高于 80 %.研究了掺氟量和退火温度对薄膜电阻率和透光率的影响 ,结果表明 :氟的掺入增加了载流子浓度 ,使得薄膜的电阻率明显下降 ,而薄膜的透光率变差 ,但是可以通过真空退火处理使其得到显著的改善 ,掺氟量越大需要的退火温度越高 .X射线衍射分析说明 ,氟的掺入使薄膜的无序度增加 ;退火处理提高了薄膜的结晶状况 ,改善了薄膜的透光性能 ,同时也没有增加薄膜的电阻率 .
The transparent conductive film doped with fluorine - doped indium oxide was deposited by DC glow - CF4 O2 plasma enhanced reactive evaporation method. The resistivity of the film after vacuum annealing reached 18 × 10 -3 Ω · cm and the light transmittance was higher than 80%. The effects of fluorine content and annealing temperature on the resistivity and transmittance of the films were investigated. The results show that the incorporation of fluorine increases the carrier concentration, the resistivity of the films decreases obviously, while the transmittance of the films decreases, But can be significantly improved by vacuum annealing treatment, the higher the amount of fluorine required the higher annealing temperature.X-ray diffraction analysis shows that fluorine incorporation of the film increases the degree of disorder; annealing treatment increased the crystallization of the film Condition, improve the light transmission performance of the film, but also did not increase the resistivity of the film.