通过衬底热载流子注入技术 ,对薄SiO2 层击穿特性进行了研究 .与通常的F N应力实验相比较 ,热载流子导致的薄栅氧化层击穿显示了不同的击穿特性 .通过计算注入到氧化层中的电子能量和硅衬底的电场的关系表明 ,热电子注入和F N隧穿的不同可以用氧化层中电子的平均能量来解释 .热空穴注入的实验结果表明薄栅氧化层的击穿不仅由注入的空穴数量决定 .提出了全新的热载流子增强的薄栅氧化层经时击穿模型 The breakdown behavior of the thin SiO2 layer was investigated by hot-carrier substrate implantation, and the breakdown of the thin gate oxide by hot carriers showed different breakdown characteristics compared with the usual FN stress experiments. The relationship between the electron energy injected into the oxide layer and the electric field of the silicon substrate shows that the difference between hot electron injection and FN tunneling can be explained by the average energy of the electrons in the oxide layer.The experimental results of hot hole injection show that the thin The breakdown of the gate oxide layer is not only determined by the number of holes injected, but also a new hot-carrier enhanced breakdown-time breakdown model of thin gate oxide