本文介绍了PECVD法制备的α—SiN_x:H薄膜的热退火释氢特性及其红外吸收光谱,在退火温度T≤350℃时,膜中Si-H和N-H健均具有良好的热稳定性;当T≥400℃时,膜中的氢明显逸出,且释氢速度与T和T(?)(衬底温度)密切相关,膜中相对氢含量与退火时间为准近似指数函数,N-H键比Si-H键更容易断裂。 In this paper, the thermal annealing hydrogen evolution properties and the infrared absorption spectra of α-SiN_x: H thin films prepared by PECVD are introduced. When the annealing temperature is T≤350 ℃, the Si-H and NH fine films possess good thermal stability. When T≥400 ℃, the hydrogen in the film evidently escapes, and the rate of hydrogen evolution is closely related to T and T (?) (Substrate temperature). The relative hydrogen content in the film and the annealing time are quasi-exponential functions. The NH bond It is easier to break than Si-H bond.