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针对传感器技术的基本研究的主要课题之一是如何改善制作红外焦平面列阵的碲镉汞材料的品质。这种列阵位于电子器件上面,由大量的探测元组成;整个列阵器件可产生高分辨率的图象。因为HgCdTe的光谱响应范围恰好在红外波段,而且其工作温度比较适中,因此它是制作更好的焦平面的最佳应选材料。单片本征硅作为制作可见光和近红外焦平面的材料之一,已为大家所承认。有些热电材
One of the major topics in the basic research on sensor technology is how to improve the quality of HgCdTe materials used to fabricate infrared focal plane arrays. The array is located above the electronics and consists of a large number of detectors; the entire array of devices produces high-resolution images. Because the spectral response of HgCdTe happens to be in the infrared range and its operating temperature is moderate, it is the best material for making a better focal plane. Monolithic intrinsic silicon, one of the materials used to make visible and near-infrared focal planes, has been acknowledged by everyone. Some thermoelectric materials