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采用简单的磁控溅射方法,在室温合成了Cd S多晶薄膜.在溅射Cd S多晶薄膜过程中,分别在Ar气中通入0%、0.88%、1.78%、2.58%和3.40%(体积分数,φ)的O2,得到不同O含量的Cd S多晶薄膜.通过X射线衍射仪、拉曼光谱仪、扫描电子显微镜、X射线光电子能谱仪、紫外-可见光谱仪对得到的Cd S多晶薄膜进行表征.分析结果表明:O的掺入能得到结合更加致密,晶粒尺寸更小的Cd S多晶薄膜;与溅射气体中没有O2时制备的Cd S多晶薄膜的光学带隙(2.48 e V)相比,当溅射气体中O2的含量为0.88%和1.78%(φ)时,制备得到的Cd S多晶薄膜具有更大的光学带隙,分别为2.60和2.65 e V;而当溅射气体中O2的含量为2.58%和3.40%(φ)时,得到的Cd S光学带隙分别为2.50和2.49 e V,与没有掺杂O的Cd S的光学带隙(2.48 e V)相当;当溅射气体中O2的含量为0.88%(φ)时,制备的Cd S多晶薄膜具有最好的结晶质量.通过磁控溅射方法,在溅射气体中O2含量为0.88%(φ)条件下制备的Cd S多晶薄膜表面沉积了Cd Te多晶薄膜并在Cd Cl2气氛中进行了高温退火处理,对退火前后的Cd Te多晶薄膜进行了表征.表征结果显示:Cd S中掺入O能得到结合更紧密、退火后晶粒尺寸更大的Cd Te多晶薄膜.通过磁控溅射方法,在Cd S制备过程中于Ar中掺入O2,在室温就能得到具有更大光学带隙的Cd S多晶薄膜,该方法是一种简单和有效的方法,非常适用于大规模工业化生产.
The CdS polycrystalline thin films were synthesized at room temperature by a simple magnetron sputtering method.In the sputtering of CdS polycrystalline thin films, 0%, 0.88%, 1.78%, 2.58% and 3.40 (Volume fraction, φ) of O2 to obtain CdS polycrystalline films with different content of O. The obtained CdS films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and UV- S polycrystalline thin films were characterized.The results show that: O doped Cd S polycrystalline thin films with more densely packed, smaller grain size; Cd S polycrystalline thin films prepared in the absence of O2 in the sputtering gas Compared with the bandgap (2.48 eV), when the content of O2 in the sputtering gas is 0.88% and 1.78% (φ), the CdS polycrystalline films prepared have larger optical bandgap, which are 2.60 and 2.65 eV, respectively. When the content of O2 in sputtering gas is 2.58% and 3.40% (φ), the optical band gaps of CdS are 2.50 and 2.49 eV, respectively, and the optical band gaps of CdS doped with no O (2.48 eV), and the best crystalline quality of CdS polycrystalline thin films was obtained when the content of O2 in the sputtering gas was 0.88% (φ) .After magnetron sputtering, The CdTe polycrystalline thin films deposited on the surface of CdS polycrystalline films with O2 content of 0.88% (φ) were deposited and annealed at high temperature in Cd Cl2 atmosphere. The CdTe polycrystalline films were characterized before and after annealing. The characterization results show that the CdTe polycrystalline thin films with more tightly bonded and larger grain size after annealing can be obtained by incorporating O into CdS.Oxygen is doped into Ar by CdS during magnetron sputtering, CdS polycrystalline films with larger optical bandgap can be obtained at room temperature. This method is a simple and effective method, which is very suitable for large-scale industrial production.