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微桥是微测辐射热计阵列像元的重要部分,经微细加工工艺制成的微桥结构常常发生弯曲变形,从而严重影响器件性能。利用有限元分析方法研究了造成微桥变形的原因。结果表明,重力导致的微桥形变值仅为1.44×10-5μm,而薄膜的本征应力导致的形变值却高达2.108μm,与实际观测值相当。因此,本征应力是造成微桥变形的主要原因。此外,还研究了本征应力梯度导致的形变,并提出了采用在电极的表面再沉积一层SiNx薄膜的方法,使桥腿的形变值由0.587μm明显地减小到0.271μm,有效地控制了本征应力梯度导致的桥腿变形。
Micro-bridge is a micro-bolometer array pixel an important part of the micro-processing technology made of micro-bridge structure often bend, which seriously affected the performance of the device. The reason of micro-bridge deformation is studied by using finite element analysis method. The results show that the micro-bridge deformation caused by gravity is only 1.44 × 10-5μm, while the intrinsic strain of the thin film causes the deformation value up to 2.108μm, which is equivalent to the actual observation. Therefore, intrinsic stress is the main reason for the deformation of micro-bridge. In addition, the deformation caused by the intrinsic stress gradient was also studied, and the method of depositing SiNx thin film on the surface of the electrode was also proposed. The deformation value of the bridge leg was obviously reduced from 0.587μm to 0.271μm, which effectively controlled Bridge deformation caused by intrinsic stress gradient.