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用DLTS法结合C-V法,研究了不同能量的电子辐照(0.5MeV,1MeV,5MeV)在n型LPE GaAs层中产生的E_3、E_4、E_5和P_1、P_2、P_3等缺陷的引入率及其在400—550K范围内的等时退火行为.由引入率与电照能量的关系推断,P_2、P_3两缺陷是与两个以上原子位移有关的缺陷,而不是象E_3、E_4、E_5那样的单原子位移缺陷.5MeV电照下,E_3与E_5的引入率分别是0.5-MeV电照的13倍和9倍,而在这两个能量下,E_4的引入率之比却是55倍.这说明E_4不仅可以由电照直接引入,也可以由较大能量电照产生的某种多位移缺陷的分解而引入.
The DLTS method and the CV method were used to study the introduction rates of E_3, E_4, E_5, P_1, P_2, P_3 and other defects in n-type LPE GaAs layers irradiated by different energies of electrons (0.5MeV, 1MeV, 5MeV) Isothermal annealing in the range of 400-550 K. It is inferred from the relationship between the introduction rate and the electrophotographic energy that the P 2 and P 3 defects are the defects related to the displacement of two or more atoms rather than the ones like E 3, E 4, E 5 Atomic displacement defects .5MeV electrosensor, E_3 and E_5 introduction rate of 0.5-MeV electrotransport of 13 times and 9 times, but at these two energies, the introduction rate of E_4 ratio is 55 times. E_4 can not only be introduced directly by electrophotography but also introduced by the decomposition of some kind of multi-displacement defects generated by larger energy electrophotography.