论文部分内容阅读
为提高SnO2的半导体性能,以分析纯SnCl2.2H2O和NiCl2.6H2O为主要原料,控制不同n(Ni2+)/n(Sn2+),利用溶胶凝胶-浸渍提拉法制备了(Sn1-x,Ni2x)O2纳米颗粒膜及半导体元件。用XRD、AFM对样品的结构、形貌进行了分析,并测试了(Sn1-x,Ni2x)O2元件的半导体性能。结果表明,(Sn1-x,Ni2x)O2纳米颗粒膜表面椭球形颗粒排列致密,尺寸约30 nm,(Sn1-x,Ni2x)O2为金红石型结构,但Ni2+代替了SnO2晶格中的部分Sn4+,使其晶胞参数a轴长平均减小0.000 4 nm,c轴长平均减小0.000 3 nm;随n(Ni2+)/n(Sn2+)由0.006增大到0.03,(Sn1-x,Ni2x)O2的晶粒尺寸由约45 nm减小至约18 nm;随温度由30℃上升至150℃,n型(Sn1-x,Ni2x)O2半导体元件的电阻约减小至其10%,而纯净SnO2元件的电阻仅约减小至其15%;随n(Ni2+)/n(Sn2+)的增大,离子化杂质散射增强,(Sn1-x,Ni2x)O2内部载流子迁移率下降,元件在150℃左右的电阻也由4.8 kΩ增大至12.1 MΩ,提高了元件的半导体性能。
In order to improve the semiconducting properties of SnO2, Sn1-x, Ni2x (Sn2-x) and Sn2 + are prepared by sol-gel-impregnation method using pure SnCl2.2H2O and NiCl2.6H2O as the main raw materials. ) O2 nanoparticle film and semiconductor device. The structure and morphology of the samples were analyzed by XRD and AFM, and the semiconductor properties of (Sn1-x, Ni2x) O2 were tested. The results show that the surface of the (Sn1-x, Ni2x) O2 nanoparticle film is densely packed with ellipsoidal particles with a size of about 30 nm. (Sn1-x, Ni2x) O2 is a rutile structure but Ni2 + replaces a part of the Sn4 + , The a-axis length of unit cell decreases by 0.000 4 nm on average, and the average length of c-axis decreases by 0.000 3 nm on average. With increasing of n (Ni2 +) / n (Sn2 +) from 0.006 to 0.03 (Sn1-x, Ni2x) The grain size of O2 decreases from about 45 nm to about 18 nm. The resistance of the n-type (Sn1-x, Ni2x) O2 semiconductor element decreases to about 10% as the temperature rises from 30 ° C. to 150 ° C., The resistance of the SnO2 element is only reduced to about 15%. With the increase of n (Ni2 +) / n (Sn2 +), the scattering of the ionized impurity is enhanced and the mobility of the carrier in the Sn1-x, Ni2xO2 decreases. The resistance at about 150 ° C also increases from 4.8 kΩ to 12.1 MΩ, improving the semiconductor performance of the device.