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采用 GSMBE技术 ,在材料表征和分析的基础上 ,通过优化生长条件 ,生长出高性能In0 .4 9Ga0 .51P/ Ga As异质结双极晶体管 (HBT)微结构材料 ,并制备出器件。材料结构中采用了厚度为 6 0 nm、掺杂浓度为 3× 10 19cm-3的掺 Be Ga As基区和 5nm非掺杂隔离层 ,器件流片中采用湿法化学腐蚀制作台面结构。测试结果表明该类器件具有良好的结特性 ,在集电极电流密度 2 80 A/cm2时其共发射极电流增益达 32 0。由此说明非掺杂隔离层的引入有效地抑制了由于基区 Be扩散导致的 pn结与异质结偏位及其所引起的器件性能劣化。
Based on the characterization and analysis of the material, the high performance In0.49Ga0.51P / GaAs Heterojunction Bipolar Transistor (HBT) microstructure material was grown by optimizing the growth conditions using GSMBE technology and the device was fabricated. In the material structure, a Be Ga As base region with a thickness of 60 nm and a doping concentration of 3 × 10 19 cm -3 and a non-doped 5 nm undoped layer were used. The mesa structure was fabricated by wet chemical etching in the device flow sheet. The test results show that the devices have good junction characteristics, with a total emitter current gain of 32 0 at a collector current density of 280 A / cm2. It is concluded that the introduction of non-doped isolation layer effectively suppresses the degeneration of the pn junction and the heterojunction due to the diffusion of the base region Be and the degradation of the device performance caused thereby.