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对利用气源分子束外延(GSMBE)技术生长的InAs/GaAs量子点激光器的工作结温进行了研究,结温的测试是基于量子点激光器的温度升高会导致Fabry-Perot(F-P)腔的腔模移动。在20℃脉冲工作模式下,当脉冲注入电流的占空比从1%变化到准连续波(95%),InAs/GaAs量子点激光器的结温升高了23.9℃,在相同的测试条件下,商用量子阱激光器的结温仅升高了3.5℃。InAs/GaAs量子点激光器的结温比商用量子阱激光器的结温升高了6.8倍,这是影响激光器性能的一个重要参数。
The work junction temperature of InAs / GaAs QDs grown by gas source molecular beam epitaxy (GSMBE) was studied. The junction temperature was measured based on the temperature rise of quantum dot lasers that led to Fabry-Perot (FP) Cavity mode movement. At 20 ℃ pulse mode, when the duty ratio of pulse injection current changes from 1% to quasi-continuous wave (95%), the junction temperature of InAs / GaAs QD laser increases by 23.9 ℃. Under the same test conditions , The junction temperature of the commercial quantum well laser rises only 3.5 ℃. The junction temperature of the InAs / GaAs QD laser is 6.8 times higher than that of the commercial QW laser, which is an important parameter that affects the performance of the laser.