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通过采用加会切磁场、增大离子源阴极与阳极距离并限制源等离子体发射角，从而使源阳极电位高于等离子体电位和采用改变源阳极结构──仅用阳极筒──从而改变弧放电路径这３种方法，对改善ＭＥＶＶＡ源引出离子束流密度分布的均匀性进行了初步的研究。第３种方法从根本上改变了ＭＥＶＶＡ源引出束分布的高斯分布特性，在合适的条件下可能得到更为均匀的束流密度分布。
Changing the arc by using a tangent magnetic field that increases the distance between the cathode and the anode of the ion source and limits the source plasma emission angle so that the source anode potential is above the plasma potential and the source anode structure is changed - Discharge path of these three methods to improve the MEVVA source ion beam current density distribution uniformity of the preliminary study. The third method fundamentally changes the Gaussian distribution of the outgoing beam distribution of the MEVVA source, and it is possible to obtain a more uniform beam current density distribution under suitable conditions.