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基于静电放电(ESD)应力下深亚微米栅接地N型场效应晶体管(GGNMOS)二次击穿的物理特性,将建立的热击穿温度模型、热源模型与温度相关参数模型相结合,提出了一种新的电热模型,并进行了优化。基于这些模型,可仿真出器件的二次击穿电流值It2(GGNMOS的失效阈值),进而模拟出GGNMOS全工作区域的VD-ID曲线。对两种不同的GGNMOS样品进行模拟仿真,将得到的结果与TLP(传输线脉冲)实验测试的结果相比较,证实了模型的可行性。利用该物理级模型,可快速评估GGNMOS的工艺、版图参数以及脉冲应力宽度对ESD鲁棒性的影响。
Based on the physical properties of GGNMOS secondary breakdown under electrostatic discharge (ESD) stress, the established thermal breakdown temperature model, heat source model and temperature-dependent parameter model are proposed A new electric model and optimized. Based on these models, we can simulate the device’s secondary breakdown current It2 (GGNMOS failure threshold), and then simulate the GGNMOS VD-ID curve of the entire work area. The simulation of two different GGNMOS samples is compared with the experimental results of TLP (transmission line pulse), and the feasibility of the model is verified. Using this physical-level model, the impact of GGNMOS process, layout parameters, and pulse stress width on ESD robustness can be quickly assessed.