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通过正交试验设计对制备ＶＯ２薄膜过程中的部分影响因素（膜厚，最终热处理温度和热处理保温时间）进行了分析研究。ＶＯ２薄膜由无机溶胶－凝胶法制备Ｖ２Ｏ５凝胶膜经真空热处理而成。试验结果表明，ＶＯ２薄膜的最终电学性能明显受到膜厚、热处理温度和保温时间的影响。其中以热处理温度的影响作用最为显著。当真空度为３Ｐａ、升温速率为２℃／ｍｉｎ时，在试验参数范围内（真空热处理温度３４０～５００℃，保温时间４０～２４０ｍｉｎ，膜厚０．２５～０．４５μｍ），经分析得到使ＶＯ２薄膜具有最大电阻突变特性的优化工艺为：加热温度５００℃，保温时间１４０ｍｉｎ，膜厚０．２５μｍ。文中对试验结果进行了讨论。
Through orthogonal experimental design, some influencing factors (film thickness, final heat treatment temperature and heat treatment holding time) during the preparation of VO2 thin films were analyzed. VO2 thin film prepared by inorganic sol-gel V2O5 gel film by vacuum heat treatment. The experimental results show that the final electrical properties of VO2 thin films are significantly affected by the film thickness, heat treatment temperature and holding time. Among them, the effect of heat treatment temperature is the most significant. When the vacuum degree is 3Pa and the heating rate is 2 ℃ / min, the experimental parameters (vacuum heat treatment temperature 340 ~ 500 ℃, holding time 40 ~ 240min, film thickness 0.25 ~ 0.45μm) VO2 thin film has the greatest resistance mutation characteristics of the optimization process: heating temperature 500 ℃, holding time 140min, film thickness 0.25μm. The test results are discussed in this paper.