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为了改善单晶硅材料表面的黏附性能,对单晶硅片进行碳离子注入,注入剂量为2×1016ions/cm2,注入能量分别为40 keV和80 keV.采用X射线衍射、X光电子能谱仪和三维轮廓仪研究了碳离子注入前后硅片的晶体结构、化学组分及其面粗糙度,通过接触角测定仪和扫描探针显微镜测量了碳离子注入前后硅片表面的接触角和黏附力的大小.结果表明:碳离子注入改变了硅片表面的晶体结构,在表面形成富含碳和碳化硅的改性层,较注入前粗糙度和接触角分别增加70%~90%和1.7~1.8倍;随着碳离子注入能量的增大,疏水性的碳和碳化硅增多,粗糙度和接触角分别增加9.5%和3.4%.在33%和70%这2种相对湿度条件下,碳离子注入后硅片表面的黏附力分别减少54%~57%和34%~37.3%;碳离子注入能量增加,黏附力分别减小6.7%和4.8%.相对湿度从33%增加到70%时,单晶硅、注入能量为40 keV和80 keV的硅片表面的黏附力分别增加1.24,2.22,2.28倍.
In order to improve the adhesion of monocrystalline silicon surface, single crystal silicon wafer was implanted with carbon ions at a dose of 2 × 10 16 ions / cm 2 and implantation energies of 40 keV and 80 keV, respectively. X-ray diffraction, X-ray photoelectron spectroscopy And the three-dimensional profiler were used to study the crystal structure, chemical composition and surface roughness of the silicon wafers before and after carbon ion implantation. The contact angles and adhesion of silicon wafers before and after carbon ion implantation were measured by a contact angle measuring instrument and a scanning probe microscope The results show that the carbon ion implantation changes the crystal structure of the silicon surface and forms a modified layer rich in carbon and silicon carbide on the surface, increasing the roughness and the contact angle by 70% -90% and 1.7 ~ 1.8 times; with the increase of carbon ion implantation energy, the hydrophobic carbon and silicon carbide increased, the roughness and contact angle increased by 9.5% and 3.4% respectively.When the relative humidity of 33% and 70% After the ion implantation, the adhesion of the silicon surface decreased by 54% -57% and 34% -37.3%, respectively, and the energy of carbon ion implantation increased by 6.7% and 4.8% respectively, while the relative humidity increased from 33% to 70% , Single crystal silicon, the adhesion energy of silicon surface with energy of 40 keV and 80 keV Do not increase 1.24,2.22,2.28 times.