由于GaAs高速集成电路的发展,非掺半绝缘GaAs晶体受到很大的重视.高压LEC法生长的圆形大直径衬底,并与直接离子注入技术相结合,已普遍认为是制备IC的可行技术.目前,从富砷熔体的高压LEC/PBN法生长热稳定性良好的半绝缘晶体的工艺,已日趋成熟.晶体生长的研究重点已逐渐转移至完整性和均匀性方面.因此,我们在研 Due to the development of high-speed integrated circuits (GaAs), non-doped semi-insulating GaAs crystals have received great attention.High-voltage LEC growth of large-diameter circular substrates, combined with direct ion implantation, is generally considered to be a viable technology for IC fabrication At present, the process of growing semi-insulating crystals with good thermal stability from the high-pressure LEC / PBN process of arsenic-rich melt has become more and more mature.The focus of crystal growth has gradually shifted to the aspects of integrity and uniformity, research