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在特定的气体氛围下,用一定能量密度的超短脉冲激光连续照射单晶硅片表面,或者离子注入在硅中引入硫族元素等方法,可在硅表面得到具有奇特光电性质的微米量级尖锥结构,该微锥结构被称为黑硅。这一新材料有奇特的光电性质,如对0.25～17μm波长的光有强烈的吸收,具有良好的场致发射特性等,为硅提供许多新的功能。Mazur教授预言这种新材料相当于60年前的半导体,在探测器、传感器、显示技术及微电子等领域都有重要的潜在应用价值,尤其在高效太阳能电池领域具有其他材料无可比拟的优越性。本文介绍了超快激光微构造硅的形成机理,研究进展、光电特性以及应用前景。
In a specific gas atmosphere, with a certain energy density of ultrashort pulse laser continuous irradiation of single crystal silicon surface, or ion implantation in the introduction of chalcogen in silicon and other methods can be obtained on the silicon surface with unique photoelectric properties of the micron order A pyramidal structure, which is called black silicon. The new material has a unique photoelectric properties, such as 0.25 ~ 17μm wavelength of the light has a strong absorption, with good field emission characteristics, etc., to provide many new silicon functions. Professor Mazur predicted that this new material is equivalent to 60 years ago, the semiconductor, in the detector, sensor, display technology and microelectronics and other fields have important potential applications, especially in the field of high efficiency solar cells with other materials incomparable superior Sex. This article introduces the formation mechanism, research progress, optoelectronic properties and application prospects of ultrafast laser micro-structured silicon.