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A novel binuclear europium b-diketone complex with squaric acid ligand was synthesized for the first time. Its structure was elucidated by IR, UV, and Elemental Analysis. Red light emitting diode (LED) was fabricated by using the novel europium complex as an emitting layer, tris(8-quinolinolate) aluminum (III) (Alq3) as an electron-transporting layer, N, N’-diphenyl-N, N’-(3-methylphenyl)-1,1’-biphenyl-4,4’-diamine (TPD) as a hole-transporting layer. A cell structure of indium-tin-oxide/TPD/Eu-complex/Alq3/Mg: Ag was employed. Red electroluminescence was observed at room temperature with dc bias voltage of 2 V in this cell. Red emission peaks at about 613 nm with maximum luminance of over 106 cd/m2. Compared with the EL luminance from those europium complexes reported before, one from the Eu-complex is best in the same cells.
A novel binuclear europium b-diketone complex with squaric acid ligand was synthesized for the first time. Its structure was elucidated by IR, UV, and Elemental Analysis. Red light emitting diode (LED) was fabricated by using the novel europium complex as an emitting layer, tris (8-quinolinolate) aluminum (III) (Alq3) as an electron-transporting layer, N, N’-diphenyl- N, N’- (3-methylphenyl) -1,1’-biphenyl-4,4 A cell structure of indium-tin-oxide / TPD / Eu-complex / Alq3 / Mg: Ag was employed. Red electroluminescence was observed at room temperature with dc bias voltage of 2 Red emission peaks at about 613 nm with maximum luminance of over 106 cd / m2. Compared with the EL luminance from those europium complexes reported before, one from the Eu-complex is best in the same cells.