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Luminescence decay and time resolved photoluminescence(TRPL) spectra are used for study on the transient luminescence process of the nominally disordered GaInP alloy. The luminescence decay of GaInP alloy shows the temperature and excitation intensity dependent characters. At 77 K and under high excitation intensity, the luminescence decay shows single exponential time dependence, while under low excitation intensity or at 300 K, the luminescence decay shows double exponential time dependence. The analysis indicates that this nominally disordered GaInP alloy actually exhibits a very weak degree of order. The blue shift of PL peak is observed in the TRPL spectra at 77 K, which is derived from the transfer of the carriers from the ordered domain to the disordered region of the alloy. At 300 K, due to the thermal quenching, the transfer is too weak to be observed. However, The recombination of the carriers between the ordered domain and the disordered region is still devoted to luminesce.
Luminescence decay of time-resolved photoluminescence (TRPL) spectra are used for studying on the transient luminescence process of the nominally disordered GaInP alloy. At 77 K and under high excitation intensity, The luminescence decay shows single exponential time dependence, while under low excitation or at 300 K, the luminescence decay shows double exponential time dependence. The analysis indicates that this nominally disordered GaInP alloy actually exhibits a very weak degree of order. The blue shift of PL peak is observed in the TRPL spectra at 77 K, which is derived from the transfer of the carriers from the ordered domain to the disordered region of the alloy. At 300 K, due to the thermal quenching, the transfer is too weak to be observed. However, The recombination of the carriers between the ordered domain and the disordered region is still devoted to lumine sce.