本文报导一种显示漩涡缺陷的新方法——阳极电解付蚀法。以硅为阳极,在5％HF的电解液中电解付蚀,能直接观察漩涡缺陷的显示过程。漩涡缺陷在(111)N—Si中是三角形或截角三角形的浅坑,在(100)N—Si中的浅坑呈十字花形。P—Si中的形貌特征不是坑而是凸起的小丘。用Si——电解液的界面结构模型解释了实验结果。 This article reports a new method for demonstrating vortex defects - anodic electrolytic deposition. With silicon as the anode, electrolysis in 5% HF electrolytes can directly observe the display of vortex defects. Whirlpool defects in the (111) N-Si is triangular or truncated triangular shallow pit, shallow pit in (100) N-Si was cruciform. The topography in P-Si is not a pit but a raised hillock. The experimental results are explained by the interface structure model of Si - electrolyte.