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采用对靶磁控反应溅射技术以N2和H2为反应气体在硅(100)和石英衬底上制备了氢化非晶氮化硅(a-SiN:H)薄膜.利用台阶仪、原子力显微镜、紫外-可见(UV-VIS)光吸收和傅里叶红外透射光谱(FTIR)对薄膜沉积速率、微观结构及键合特性进行了分析.结果表明,利用等离子反应溅射可在较低衬底温度条件下(Ts<250℃)实现低表面粗糙度和高光学透过率的a-SiN:H薄膜制备.增加衬底温度可使薄膜厚度减小,薄膜光学带隙Eg提高,薄膜无序度减小.FTIR分析结果表明,薄膜主要以Si-N,Si-H和N-H键合结构存在,随衬底温度增加,薄膜中的键合氢含量减小,而整体键密度和Si-N键密度增加.该微观结构和光学特性的调整可归因衬底温度升高所引起的衬底表面原子迁移率和反应速率的增加.
Hydrogenated amorphous silicon nitride (a-SiN: H) thin films were deposited on silicon (100) and quartz substrates using N2 and H2 as reactant gases for target magnetron reactive sputtering. The deposition rate, microstructure and bonding properties of the films were analyzed by UV-VIS absorption spectroscopy and Fourier transform infrared transmission spectroscopy (FTIR). The results show that plasma sputtering can be used at lower substrate temperature (Ts <250 ℃), a-SiN: H thin film with low surface roughness and high optical transmittance can be fabricated.Improvement of the substrate temperature can reduce the film thickness, increase the optical bandgap Eg of the film, Decrease.The FTIR analysis results show that the films mainly exist in the Si-N, Si-H and NH bonded structures, and the hydrogen content in the films decreases with increasing substrate temperature, while the overall bond density and Si-N bond The increase in the density of the microstructure and optical properties can be attributed to the substrate surface temperature increase caused by atomic mobility and reaction rate increases.