A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated.A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved,which corresponds to a threshold current density of 0.395 kA/cm 2.The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation.While under continuous-wave (CW) operation,the maximum power attains 10.5 mW.Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from 12℃ to 96℃ and good reliability under a lifetime test.There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current. A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra- a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA / cm 2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. Whilst under continuous-wave (CW) operation, the maximum power attains 10.5 mW.Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from 12 ° C to 96 ° C and good reliability under a lifetime test. Here is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.