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研究了多孔硅膜的制备、性质和应用。在低于临界电流密度的电流下,在浓氢氟酸中进行阳极处理使硅单晶转变成多孔硅膜。当 N 型硅作阳极处理时,用光照射硅表面以产生阳极反应所必需的空穴。在本实验条件下,从 N 型硅上生成薄膜的速率要比从 P 型硅上生成的快些。其晶体结构与硅单晶相同。利用多孔硅能作成几个微米厚。并且容易氧化形成绝缘体这一特性,对于双极型集成电路提出了一个新的隔离技术。该技术的主要特点是提供了一个形成嵌入穿透 N 型外延层的厚绝缘膜的方法,并且不需要过长的热处理.为试验这一技术的实际应用,已进行了初步的实验。
The preparation, properties and application of porous silicon membrane were studied. Anodization in concentrated hydrofluoric acid converts the silicon single crystal into a porous silicon film at a current below the critical current density. When N-type silicon is anodized, the silicon surface is irradiated with light to generate holes necessary for the anode reaction. Under the experimental conditions, the rate of film formation from N-type silicon is faster than that from P-type silicon. Its crystal structure is the same as that of silicon single crystal. Using porous silicon can make a few microns thick. And easily oxidized to form an insulator, a new isolation technology is proposed for bipolar integrated circuits. The main feature of this technique is the provision of a method of forming a thick insulating film embedded in an N-type epitaxial layer without the need for excessive heat treatment. Preliminary experiments have been conducted to test the practical application of this technique.