The high power and low internal loss 1.06 μm InGaAs/GaAsP quantum well lasers with asymmetric waveguide structure were designed and fabricated. For a 4000 μm
A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well(AQW) is fabricated by metal organic chemical vapor deposition(MOCVD). The 3-μm-wide Fa