研究了沟道热载流子应力所引起的 SOI NMOSFET的损伤 .发现在中栅压应力 (Vg≈ Vd/ 2 )和高栅压应力(Vg≈ Vd)条件下 ,器件损伤表现出单一的幂律规律 ;而在低栅压应力 (Vgs≈ Vth)下 ,多特性的退化规律便会表现出来 .同时 ,应力漏电压的升高、应力时间的延续都会导致退化特性的改变 .这使预测 SOI器件的寿命变得非常困难 . The damage of the SOI NMOSFET caused by channel hot carrier stress was investigated and it was found that device damage exhibited a single power at medium gate stress (Vg ≈ Vd / 2) and high gate stress (Vg ≈ Vd) Law of law, and the degradation law of multi-characteristic will be shown under the condition of low gate-stress (Vgs ≈ Vth) .At the same time, the increase of stress leakage voltage and the extension of stress time will lead to the change of degeneration characteristics. The life of the device becomes very difficult.