【摘 要】
：
The dependence of transistor characteristics on grain boundary(GB) position in short-channel ZnO thin film transistors(TFTs) has been investigated using two-dim
【机 构】
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Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Scienc
【出 处】
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Chinese Physics B
论文部分内容阅读
The dependence of transistor characteristics on grain boundary(GB) position in short-channel ZnO thin film transistors(TFTs) has been investigated using two-dimensional numerical simulations.To simulate the device accurately,both tail states and deep-level states are taken into consideration.It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position,which is different from polycrystalline Si(poly-Si) TFTs.By analysing the mechanism of the carrier transportation in the device,it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. Sim simulating the device accurately, both tail states and deep-level states are taken into It is shown that both of the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs.By anysysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
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