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该线路用于1～25毫瓦氦氖激光器相对光强比的测定,测定比值范围0.1～1.其中,R_1为硅光电池E的负载电阻,R_2、R_3、BG_(305)组成500倍反向比例放大器,D为输出非线性校正二极管,W_1为0.1刻度校准.W_2为满刻度校准,G为100微安直流电流表作为光强比指示.调整刻度步骤如下:1.首先将滑动头W_1置中心位置,W_2置最大电阻位置.2.将硅光电池对准参考光路(强的一路光),调整W_2使G满刻度(100微安).3.在光路中垂直加入10%减光板,调整
The line is used for the determination of the relative light intensity ratio of 1-25 milliwatts He-Ne laser with the ratio range of 0.1-1, where R_1 is the load resistance of silicon photovoltaic cell E, and the composition of R_2, R_3 and BG_ (305) Amplifier, D for the output of non-linear correction diode, W_1 for the calibration of 0.1 scale. W_2 full scale calibration, G 100 microampere direct current ammeter as the light intensity ratio instructions to adjust the scale steps are as follows: First, the slider W_1 center Position, W_2 set the maximum resistance position .2 align the silicon cell reference light path (strong all the way light), adjust W_2 to G full scale (100 microampere) .3 in the light path by adding 10% light reduction board, adjust