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对集成光学头用的波导光栅器件的制作技术进行了研究。采用热氧化和离子束增强沉积方法分别在Si衬底上制备了SiO2层和玻璃波导层，制成了以Si为基底的光波导．采用PCVD法在该光波导上制备Si-N层，用全息干涉光刻法在Si-N层上制作了周期为1μm的等周期直线光栅，并用离子束刻蚀技术将该光栅转移到了Si-N层中。光栅的倾角约20～30°；一级衍射效率可达120％，具有明显的闪耀光栅特征。该光栅可用作导波光输入输出耦合器。
The fabrication technology of waveguide grating device for integrated optical head has been studied. The SiO2 layer and the glass waveguide layer were respectively prepared on the Si substrate by thermal oxidation and ion beam enhanced deposition method to fabricate an Si-based optical waveguide. The Si-N layer was prepared on the optical waveguide by PCVD method. An equal-period linear grating with a period of 1 μm was fabricated on the Si-N layer by holographic interference lithography. The grating was transferred to the Si- N layer. The grating angle of about 20 ~ 30 °; first-order diffraction efficiency up to 120%, with a clear blaze grating characteristics. The grating can be used as guided wave input-output coupler.