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本文报道用低压有机金属化合物化学气相淀积（ＬＰ－ＭＯＣＶＤ）外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变量子阶材料，材料参数与外延条件的关系，量子阱器件的结构设计及其器件应用．用所生长的材料研制出宽接触阈值电流密度小于４００Ａ／ｃｍ２（腔长４００μｍ），ＤＣ－ＰＢＨ结构阈值７～１２ｍＡ的１．３μｍ量子阱激光器和宽接触阈值电流密度小于６００Ａ／ｃｍ２（腔长４００μｍ），ＤＣ－ＰＢＨ结构阈值９～１５ｍＡ的１．５５μｍ量子阶激光器以及高功率１．３μｍ量子阱发光二极管和ＩｎＧａＡｓＰＩＮ光电探测器．
This paper reports the relationship between epitaxial growth parameters and epitaxial growth of InGaAsP / InP strained materials by LP-MOCVD. The structure design of QW devices and their device applications are reported. A 1.3μm quantum well laser with wide contact threshold current density of less than 400A / cm2 (cavity length of 400μm), DC-PBH structure threshold of 7 ~ 12mA, and wide contact threshold current density of less than 600A / cm2 400μm), a 1.55μm quantum laser with DC-PBH threshold of 9-15mA, high power 1.3μm quantum well LED and InGaAsPIN photodetector.