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GaAs太阳电池在空间辐射条件下的性能衰减与电池内部微观结构紧密相关。文章针对空间辐射带质子辐照GaAs材料,利用分子动力学方法研究由被辐射材料中产生的不同能量(0.1~10 ke V)初级离位原子(PKA)引起的级联碰撞过程,分析缺陷随辐照时间、入射PKA能量的演化规律,探讨点缺陷和缺陷簇的形成特征。研究发现,在GaAs材料的缺陷对数目随时间的演化曲线中,在“离位峰”和稳定状态时,缺陷对数目与PKA能量呈一定的线性关系;PKA能量越高,辐射损伤越严重、越不易恢复,但缺陷复合率随能量升高趋于饱和;点缺陷在GaAs中主要以缺陷簇的方式存在,且随着能量的升高,孤立缺陷倾向于缔合成缺陷簇。
The degradation of GaAs solar cells under space radiation is closely related to the cell’s internal microstructure. In this paper, a series of GaAs materials irradiated by protons in space radiation zone are studied. Molecular dynamics simulation is used to study the cascade collision caused by primary dissociation atoms (PKA) with different energies (0.1-10 keV) generated in irradiated materials. Irradiation time, the evolution of incident PKA energy, discussed the formation of point defects and defect clusters. The results show that there is a linear relationship between the number of defect pairs and the energy of PKA in the “off-peak” and stable state of GaAs material. The higher the PKA energy, the more the radiation damage Serious, and less easy to recover, but the defect recombination rate becomes saturated with the increase of energy. Point defects mainly exist in GaAs as defect clusters, and with the increase of energy, isolated defects tend to associate into defect clusters.