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砷化镓集成电路(GaAsIC)是微电子发展的重人新领域。本文将介绍其特点、主要方向和用途。重点介绍砷化镓集成技术基础研究对发展我国GaAsIC的重大意义。国家自然科学基金委员会安排“砷化镓集成电路基础技术研究”重大项目,其目的是研究国际上正在发展的第二代砷化镓集成技术——难熔栅全离子注入集成技术,为发展砷化镓超高速集成电路微波单片集成电路打下牢固的基础。
GaAsIC (GaAsIC) is a new field of development for microelectronics. This article will introduce its characteristics, main directions and uses. It mainly introduces the great significance of basic research on GaAs integration technology to the development of GaAsIC in our country. The National Natural Science Foundation of China arranges “the gallium arsenide integrated circuit basic technology research” major project, its purpose is to study the international development of the second generation of gallium arsenide integrated technology - refractory gate all ion implantation integrated technology for the development of arsenic GaAs ultra-high speed integrated circuit microwave monolithic integrated circuit laid a solid foundation.