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采用发射极 基极金属自对准工艺 ,成功研制出了InGaP/GaAs功率HBT .发射极尺寸为 (3μm× 15 μm)× 16的功率器件的截止频率和最高振荡频率分别为 5 5GHz和 35GHz .在片load pull测试表明 :当工作频率为 1GHz时 ,器件工作在AB类 ,该功率管最大输出功率为 2 3 5dBm ,最大功率附加效率达 6 0 % ,P1dB的输出功率为 2 1dBm ,对应增益为 16dB ,工作电压为 3 5V .
The InGaP / GaAs power HBT has been successfully developed using the emitter base metal self-aligned process.The cut-off frequency and the maximum oscillation frequency of the power device with the emitter size of (3μm × 15μm) × 16 are respectively 5 5GHz and 35GHz. The load pull-in tests show that the device operates in Class AB when the operating frequency is 1GHz. The maximum output power of this power tube is 235 mm and the maximum power added efficiency is 60%. The output power of P1dB is 2 1 dBm. The corresponding gain 16dB, the working voltage is 3 5V.