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分析了SPICEⅡ程序模拟耗尽型MOS器件所遇到的限制及其原因,用线性区阈电压和饱和区阈电压描述耗尽型器件线性区和饱和区特性,讨论了饱和区阈电压与线性区阈电压之差随衬偏电压变化的关系,建立了耗尽型MOS器件模型及其参数提取的新方法.模拟结果与实验基本吻合.
The limitations and causes of SPICE Ⅱ program simulated depletion mode MOS devices are analyzed. The characteristics of linear and saturated regions of depletion mode devices are described by threshold voltage of linear region and threshold voltage of saturation region. The effects of threshold voltage and linear region The difference of threshold voltage varies with the bias voltage, and a new depletion type MOS device model and a new method of parameter extraction are established.The simulation results agree well with the experiment.