Polymer thin-film transistors(PTFTs) based on poly(3-hexylthiophene) are fabricated by the spin-coating process,and their photo-sensing characteristics are investigated under steady-state visible-light illumination.The photosensitivity of the device is strongly modulated by gate voltage under various illuminations.When the device is in the subthreshold operating mode,a significant increase in its drain current is observed with a maximum photosensitivity of 1.7×10 3 at an illumination intensity of 1200 lx,and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx.However,when the device is in the on-state operating mode,the photosensitivity is very low:only 1.88 at an illumination intensity of 1200 lx for a gate voltage of-20 V and a drain voltage of -20 V.The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light.The modulation mechanism of the photosensitivity in the PTFT is discussed in detail. Polymer thin-film transistors (PTFTs) based on poly (3-hexylthiophene) are fabricated by the spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7 × 10 3 at an illumination intensity of 1200 lx, and even with a relatively photosensitivity of 611 at a low illumination intensity of 100 lx.However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of-20 V and a drain voltage of -20 V. The results that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detai l.