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采用传统提拉法单晶生长技术成功生长出了Cr,Mg:GSGG晶体,并对生长出的晶体样品进行了氧化气氛和还原气氛退火处理.通过对比分析退火处理前后样品吸收光谱的变化,推断出晶体中四面体配位Cr~(4+)离子的形成机理为:晶体生长和高温氧化气氛退火的过程中,四价Cr~(4+)离子首先在八面体格位上形成,然后在热激发作用下与邻近四面体格位上的Ga~(3+)离子发生置换反应,从而形成一定浓度的四面体配位Cr~(4+)离子.实验结果还表明,随着电荷补偿离子Mg~(2+)离子浓度的增大,更有利于提高四面体配位Cr~(4+)离子的浓度.
The Cr, Mg: GSGG crystals were successfully grown by the conventional Czochralski method, and the grown samples were annealed in both oxidizing and reducing atmospheres. By comparing the changes of absorption spectra before and after annealing, The formation mechanism of tetrahedrally coordinated Cr ~ (4 +) ions in the crystal is as follows: In the process of crystal growth and high temperature oxidation atmosphere annealing, the tetravalent Cr ~ (4 +) ions are firstly formed on the octahedral sites and then Under the action of thermal excitation, Ga ~ (3+) ions exchange with adjacent tetrahedral sites to form tetrahedral coordination Cr ~ (4+) ions at a certain concentration.The experimental results also show that with the charge compensation ions Mg ~ (2+) ion concentration is more conducive to improve the tetrahedral coordination Cr ~ (4 +) ion concentration.