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对GaN基TFT-LED有源阵列显示芯片结构进行了优化设计,并详细介绍了它的工作原理。文中采用Cadence公司的Virtuoso Spectre Circuit Simulator软件,通过设计芯片像素单元TFT晶体管的参数,研究了阵列芯片中LED的输出电流波形。仿真结果显示通过阵列芯片中LED电流达到了54.86mA,为芯片提供了足够的导通电流。研究结果表明TFT-LED有源阵列显示芯片结构的优势在于减少外围设备的同时增大导通电流。
The structure of the GaN-based TFT-LED active array display chip is optimized and its working principle is described in detail. In this paper, Cadence’s Virtuoso Specter Circuit Simulator software, through the design of the chip pixel unit TFT transistor parameters, the array chip LED output current waveform. Simulation results show that through the array chip LED current reached 54.86mA, the chip provides enough conduction current. The results show that TFT-LED active array display chip structure has the advantage of reducing the peripheral device while increasing the conduction current.