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用超薄切片配合透射电子显微镜观察研究了多孔型铝阳极氧化膜孔洞产生及发展的全过程。据此提出孔洞发展过程的几何模型及膜内电场分布的准静电场数学模型。用有限元方法计算了在二维近似条件下孔洞形成各阶段膜内电场的分布,从而确定了电场在孔洞发展过程中的主导作用。讨论了电场作用的机理。
The whole process of hole generation and development of porous anodic aluminum oxide film was studied by using ultrathin section and transmission electron microscope. Based on this, the geometrical model of the hole development process and the quasi-electrostatic field mathematical model of the electric field distribution in the film are proposed. The distribution of electric field in each stage of pore formation under two-dimensional approximation was calculated by finite element method, and the leading role of electric field in hole development was determined. The mechanism of electric field is discussed.